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| BAT 68-03W Silicon Schottky Diode Preliminary data * For mixer applications in the VHF/UHF range * For high speed switching Type Marking Ordering Code Q62702Q62702-A1046 Pin Configuration 1=A 2=K Package SOD-323 BAT 68-03W K Maximum Ratings Parameter Diode reverse voltage Forward current Total Power dissipation Symbol Values 8 130 150 Unit V mA mW 150 - 65 ... + 150 - 65 ... + 150 C VR IF Ptot Tj Top Tstg TS = 95 C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction ambient 1) RthJA RthJS 445 365 K/W Junction - soldering point Semiconductor Group 1 Mar-04-1996 BAT 68-03W Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) 8 318 390 - V A 0.1 1.2 mV 340 340 500 pF 1 10 I(BR) = 10 A Reverse current IR VR = 1 V, TA = 25 C VR = 1 V, TA = 60 C Forward voltage VF IF = 1 mA IF = 10 mA Diode capacitance CT RF VR = 0 , f = 1 MHz Differential forward resistance IF = 5 mA Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 200 mA IF 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 C 150 TA ,TS TA TS Semiconductor Group 2 Mar-04-1996 BAT 68-03W Permissible Pulse Load RTHJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) 10 3 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Forward Current IF = f(VF) Reverse current IR = f (TA) Semiconductor Group 3 Mar-04-1996 BAT 68-03W Diode capacitance CT = f (VR) f = 1MHz Differential forward resistance rf = f(IF) f = 10kHz Semiconductor Group 4 Mar-04-1996 BAT 68-03W Package Semiconductor Group 5 Mar-04-1996 |
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